Breakdown characteristics of flexible Cu(In,Ga)Se2 solar cells
Identifieur interne : 000188 ( Main/Repository ); précédent : 000187; suivant : 000189Breakdown characteristics of flexible Cu(In,Ga)Se2 solar cells
Auteurs : RBID : Pascal:14-0027494Descripteurs français
- Pascal (Inist)
- Endommagement, Cellule solaire, Panneau solaire, Basse température, Mesure concentration, Tension disruptive, Coefficient température, Claquage avalanche, Eclairement, Haute température, Emission optique, Electroluminescence, Long terme, Séléniure de cuivre, Séléniure de gallium, Séléniure d'indium, Composé quaternaire, Verre, Cuivre, Cu(In,Ga)Se2.
- Wicri :
English descriptors
- KwdEn :
- Avalanche breakdown, Concentration measurement, Copper, Copper selenides, Damaging, Disruptive voltage, Electroluminescence, Gallium selenides, Glass, High temperature, Illumination, Indium selenides, Light emission, Long term, Low temperature, Photovoltaic array, Quaternary compound, Solar cell, Temperature coefficient.
Abstract
The behavior of solar cells under reverse bias conditions is of crucial importance for solar module design and stability. For flexible, low temperature deposited Cu(In,Ga)Se2 (CIGSe) solar cells indications for tunnel breakdown at operation temperatures around 300 K are found using temperature and net carrier concentration dependent measurements of the breakdown voltage VBR. For temperatures below 200 K, the temperature coefficient of the breakdown voltage becomes positive, indicating a change of the breakdown mechanism to avalanche breakdown. A reduction of VBR caused by the illumination with blue photons is demonstrated, which coincides well with results and models for high temperature deposited CIGSe on glass. Furthermore, spectrally resolved measurements of light emission during breakdown indicate a first ReBEL (reverse bias electroluminescence) signature for CIGSe solar cells.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Breakdown characteristics of flexible Cu(In,Ga)Se<sub>2</sub> solar cells</title><author><name sortKey="Puttnins, S" uniqKey="Puttnins S">S. Puttnins</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Solarion AG, Ostende 5</s1><s2>04288 Leipzig</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Saxe (Land)</region><region type="district" nuts="2">District de Leipzig</region><settlement type="city">Leipzig</settlement></placeName></affiliation><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Institut für Experimentelle Physik II, Universität Leipzig, Linnéstrasse 5</s1><s2>04103 Leipzig</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Saxe (Land)</region><region type="district" nuts="2">District de Leipzig</region><settlement type="city">Leipzig</settlement></placeName></affiliation></author><author><name sortKey="Jander, S" uniqKey="Jander S">S. Jander</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Solarion AG, Ostende 5</s1><s2>04288 Leipzig</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Saxe (Land)</region><region type="district" nuts="2">District de Leipzig</region><settlement type="city">Leipzig</settlement></placeName></affiliation></author><author><name sortKey="Wehrmann, A" uniqKey="Wehrmann A">A. Wehrmann</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstr 15</s1><s2>04318 Leipzig</s2><s3>DEU</s3><sZ>3 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Saxe (Land)</region><region type="district" nuts="2">District de Leipzig</region><settlement type="city">Leipzig</settlement></placeName></affiliation></author><author><name sortKey="Benndorf, G" uniqKey="Benndorf G">G. Benndorf</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Institut für Experimentelle Physik II, Universität Leipzig, Linnéstrasse 5</s1><s2>04103 Leipzig</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Saxe (Land)</region><region type="district" nuts="2">District de Leipzig</region><settlement type="city">Leipzig</settlement></placeName></affiliation></author><author><name sortKey="Stolzel, M" uniqKey="Stolzel M">M. Stölzel</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Institut für Experimentelle Physik II, Universität Leipzig, Linnéstrasse 5</s1><s2>04103 Leipzig</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Saxe (Land)</region><region type="district" nuts="2">District de Leipzig</region><settlement type="city">Leipzig</settlement></placeName></affiliation></author><author><name sortKey="M Ller, A" uniqKey="M Ller A">A. M Ller</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Institut für Experimentelle Physik II, Universität Leipzig, Linnéstrasse 5</s1><s2>04103 Leipzig</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Saxe (Land)</region><region type="district" nuts="2">District de Leipzig</region><settlement type="city">Leipzig</settlement></placeName></affiliation></author><author><name sortKey="Von Wenckstern, H" uniqKey="Von Wenckstern H">H. Von Wenckstern</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Institut für Experimentelle Physik II, Universität Leipzig, Linnéstrasse 5</s1><s2>04103 Leipzig</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Saxe (Land)</region><region type="district" nuts="2">District de Leipzig</region><settlement type="city">Leipzig</settlement></placeName></affiliation></author><author><name sortKey="Daume, F" uniqKey="Daume F">F. Daume</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Solarion AG, Ostende 5</s1><s2>04288 Leipzig</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Saxe (Land)</region><region type="district" nuts="2">District de Leipzig</region><settlement type="city">Leipzig</settlement></placeName></affiliation><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Institut für Experimentelle Physik II, Universität Leipzig, Linnéstrasse 5</s1><s2>04103 Leipzig</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Saxe (Land)</region><region type="district" nuts="2">District de Leipzig</region><settlement type="city">Leipzig</settlement></placeName></affiliation></author><author><name sortKey="Rahm, A" uniqKey="Rahm A">A. Rahm</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Solarion AG, Ostende 5</s1><s2>04288 Leipzig</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Saxe (Land)</region><region type="district" nuts="2">District de Leipzig</region><settlement type="city">Leipzig</settlement></placeName></affiliation></author><author><name sortKey="Grundmann, M" uniqKey="Grundmann M">M. Grundmann</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Institut für Experimentelle Physik II, Universität Leipzig, Linnéstrasse 5</s1><s2>04103 Leipzig</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Saxe (Land)</region><region type="district" nuts="2">District de Leipzig</region><settlement type="city">Leipzig</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0027494</idno><date when="2014">2014</date><idno type="stanalyst">PASCAL 14-0027494 INIST</idno><idno type="RBID">Pascal:14-0027494</idno><idno type="wicri:Area/Main/Corpus">000250</idno><idno type="wicri:Area/Main/Repository">000188</idno></publicationStmt><seriesStmt><idno type="ISSN">0927-0248</idno><title level="j" type="abbreviated">Sol. energy mater. sol. cells</title><title level="j" type="main">Solar energy materials and solar cells</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Avalanche breakdown</term><term>Concentration measurement</term><term>Copper</term><term>Copper selenides</term><term>Damaging</term><term>Disruptive voltage</term><term>Electroluminescence</term><term>Gallium selenides</term><term>Glass</term><term>High temperature</term><term>Illumination</term><term>Indium selenides</term><term>Light emission</term><term>Long term</term><term>Low temperature</term><term>Photovoltaic array</term><term>Quaternary compound</term><term>Solar cell</term><term>Temperature coefficient</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Endommagement</term><term>Cellule solaire</term><term>Panneau solaire</term><term>Basse température</term><term>Mesure concentration</term><term>Tension disruptive</term><term>Coefficient température</term><term>Claquage avalanche</term><term>Eclairement</term><term>Haute température</term><term>Emission optique</term><term>Electroluminescence</term><term>Long terme</term><term>Séléniure de cuivre</term><term>Séléniure de gallium</term><term>Séléniure d'indium</term><term>Composé quaternaire</term><term>Verre</term><term>Cuivre</term><term>Cu(In,Ga)Se2</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Verre</term><term>Cuivre</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The behavior of solar cells under reverse bias conditions is of crucial importance for solar module design and stability. For flexible, low temperature deposited Cu(In,Ga)Se<sub>2</sub> (CIGSe) solar cells indications for tunnel breakdown at operation temperatures around 300 K are found using temperature and net carrier concentration dependent measurements of the breakdown voltage V<sub>BR</sub>. For temperatures below 200 K, the temperature coefficient of the breakdown voltage becomes positive, indicating a change of the breakdown mechanism to avalanche breakdown. A reduction of V<sub>BR</sub> caused by the illumination with blue photons is demonstrated, which coincides well with results and models for high temperature deposited CIGSe on glass. Furthermore, spectrally resolved measurements of light emission during breakdown indicate a first ReBEL (reverse bias electroluminescence) signature for CIGSe solar cells.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0927-0248</s0></fA01><fA03 i2="1"><s0>Sol. energy mater. sol. cells</s0></fA03><fA05><s2>120</s2></fA05><fA06><s3>p. b</s3></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Breakdown characteristics of flexible Cu(In,Ga)Se<sub>2</sub> solar cells</s1></fA08><fA11 i1="01" i2="1"><s1>PUTTNINS (S.)</s1></fA11><fA11 i1="02" i2="1"><s1>JANDER (S.)</s1></fA11><fA11 i1="03" i2="1"><s1>WEHRMANN (A.)</s1></fA11><fA11 i1="04" i2="1"><s1>BENNDORF (G.)</s1></fA11><fA11 i1="05" i2="1"><s1>STÖLZEL (M.)</s1></fA11><fA11 i1="06" i2="1"><s1>MÜLLER (A.)</s1></fA11><fA11 i1="07" i2="1"><s1>VON WENCKSTERN (H.)</s1></fA11><fA11 i1="08" i2="1"><s1>DAUME (F.)</s1></fA11><fA11 i1="09" i2="1"><s1>RAHM (A.)</s1></fA11><fA11 i1="10" i2="1"><s1>GRUNDMANN (M.)</s1></fA11><fA14 i1="01"><s1>Solarion AG, Ostende 5</s1><s2>04288 Leipzig</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="02"><s1>Institut für Experimentelle Physik II, Universität Leipzig, Linnéstrasse 5</s1><s2>04103 Leipzig</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>10 aut.</sZ></fA14><fA14 i1="03"><s1>Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstr 15</s1><s2>04318 Leipzig</s2><s3>DEU</s3><sZ>3 aut.</sZ></fA14><fA20><s1>506-511</s1></fA20><fA21><s1>2014</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>18016</s2><s5>354000508232450080</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>30 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0027494</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solar energy materials and solar cells</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The behavior of solar cells under reverse bias conditions is of crucial importance for solar module design and stability. For flexible, low temperature deposited Cu(In,Ga)Se<sub>2</sub> (CIGSe) solar cells indications for tunnel breakdown at operation temperatures around 300 K are found using temperature and net carrier concentration dependent measurements of the breakdown voltage V<sub>BR</sub>. For temperatures below 200 K, the temperature coefficient of the breakdown voltage becomes positive, indicating a change of the breakdown mechanism to avalanche breakdown. A reduction of V<sub>BR</sub> caused by the illumination with blue photons is demonstrated, which coincides well with results and models for high temperature deposited CIGSe on glass. Furthermore, spectrally resolved measurements of light emission during breakdown indicate a first ReBEL (reverse bias electroluminescence) signature for CIGSe solar cells.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="X"><s0>001D05I03D</s0></fC02><fC02 i1="03" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Endommagement</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Damaging</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Deterioración</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Cellule solaire</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Solar cell</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Célula solar</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Panneau solaire</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Photovoltaic array</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Panel solar</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Basse température</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Low temperature</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Baja temperatura</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Mesure concentration</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Concentration measurement</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Medición concentración</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Tension disruptive</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Disruptive voltage</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Voltaje disruptivo</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Coefficient température</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Temperature coefficient</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Coeficiente temperatura</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Claquage avalanche</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Avalanche breakdown</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Eclairement</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Illumination</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Alumbrado</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Haute température</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>High temperature</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Alta temperatura</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Emission optique</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Light emission</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Emisión óptica</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Electroluminescence</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Electroluminescence</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Electroluminiscencia</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Long terme</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Long term</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Largo plazo</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Séléniure de cuivre</s0><s2>NK</s2><s5>22</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Copper selenides</s0><s2>NK</s2><s5>22</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Séléniure de gallium</s0><s2>NK</s2><s5>23</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Gallium selenides</s0><s2>NK</s2><s5>23</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Séléniure d'indium</s0><s2>NK</s2><s5>24</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Indium selenides</s0><s2>NK</s2><s5>24</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Composé quaternaire</s0><s5>25</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Quaternary compound</s0><s5>25</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Compuesto cuaternario</s0><s5>25</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Verre</s0><s5>26</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Glass</s0><s5>26</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Vidrio</s0><s5>26</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Cuivre</s0><s2>NC</s2><s5>27</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Copper</s0><s2>NC</s2><s5>27</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Cobre</s0><s2>NC</s2><s5>27</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Cu(In,Ga)Se2</s0><s4>INC</s4><s5>82</s5></fC03><fN21><s1>027</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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